(China (Mainland))
Product Summary
The RJK0397DPA is a Silicon N Channel Power MOS FET.
Parametrics
RJK0397DPA absolute maximum ratings: (1)Drain to source breakdown voltage:30V; (2)Gate to source leak current:± 0.1μA; (3)Zero gate voltage drain current:1μA; (4)Gate to source cutoff voltage:1.2 to 2.5V; (5)Forward transfer admittance:95S; (6)Input capacitance:2430pF; (7)Output capacitance:320pF; (8)Reverse transfer capacitance:170pF; (9)Gate Resistance:1.4Ω; (10)Total gate charge:15.5nC; (11)Gate to source charge:7.1nC; (12)Gate to drain charge:3.7nC; (13)Turn-on delay time:13.0ns; (14)Rise time:5.2ns; (15)Turn-off delay time:45ns; (16)Fall time:6.2ns.
Features
RJK0397DPA features: (1)High speed switching; (2)Capable of 4.5 V gate drive; (3)Low drive current; (4)High density mounting; (5)Low on-resistance RDS(on) = 4.1 mΩ typ. (at VGS = 10 V); (6)Pb-free ; (7)Halogen-free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 RJK0397DPA-00#J53 |
|
MOSFET N-CH 30V 30A W-PAK |
Data Sheet |
Negotiable |
|
||||||||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||||||||
 |
RJK005N03T146 |
ROHM Semiconductor |
MOSFET N-CH 30V 500MA |
Data Sheet |
|
|
||||||||||||||||||
 |
RJK0204DPA-00#J53 |
|
MOSFET N-CH 30V W-PAK |
Data Sheet |
|
|
||||||||||||||||||
 |
RJK0225DNS-00#J5 |
|
MOSFET N-CH 25V 30A 8-HVSON |
Data Sheet |
|
|
||||||||||||||||||
|
RJK0226DNS-00#J5 |
|
MOSFET N-CH 25V 40A 8-HVSON |
Data Sheet |
|
|
||||||||||||||||||
|
RJK0230DPA-00#J5A |
|
MOSFET DL N-CH 25V 20A WPAK |
Data Sheet |
|
|
||||||||||||||||||
 |
RJK0301DPB-00#J0 |
|
MOSFET N-CH 30V 60A 5-LFPAK |
Data Sheet |
|
|
||||||||||||||||||
